Solid source dry etching process for GaAs and InP

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 10 B, 2006, Pages 8374-8377

  Matsutani, Akihiro ^a   Ohtsuki, Hideo ^b   Koyama, Fumio ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b 33 Tanakamiya cho Takeda F   (Japan)

Author keywords

Dry etching; GaAs; ICI3; Inductively coupled plasma (ICP); InP; Iodine; Solid source

Indexed keywords

CHLORINE; DRY ETCHING; INDUCTIVELY COUPLED PLASMA; IODINE; SEMICONDUCTING INDIUM PHOSPHIDE;

DEVICE FABRICATION; ETCHING CHAMBERS; SOLID SOURCE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 34547925642     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.8374     Document Type: Article

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