Low bias voltage dry etching of InP by inductively coupled plasma using SiCl4/Ar

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12 A, 1998, Pages 6655-6656

  Matsutani, Akihiro ^a   Koyama, Fumio ^a   Iga, Kenichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Dry etching; Inductively coupled plasma (ICP); InP; SiCl4 Ar

Indexed keywords

ANISOTROPY; ARGON; DRY ETCHING; PLASMA ETCHING; SILICON COMPOUNDS; SURFACE ROUGHNESS;

INDUCTIVELY COUPLED PLASMA (ICP); SILICON TETRACHLORIDE;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032290534     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6655     Document Type: Article

References (7)

1. T. Yoshikawa, S. Kohmoto, M. Anan, N. Hamao, M. Baba, N. Takado, Y. Sugimoto, M. Sugimoto and K. Asakawa: Jpn. J. Appl. Phys. 31 (1992) 4381.
2. C. Youtsey, R. Grundbacher, R. Panepucci, I. Adesida and C. Caneau: J. Vac. Sci. Technol. B 12 (1994) 3317.
3. A. Matsutani, F. Koyama and K. Iga, LEOS '95 Annu. Meet. San Francisco, CA, OMP 5.2 (1995).
4. J. Etrillard, F. Heliot, P. Ossart, M. Juhel, G. Patriarche, P. Carcenac, C. Vieu, M. Puech and P. Maquin: J. Vac. Sci. Technol. A14 (1996) 1056.
5. J. Etrillard, P. Ossart, G. Patriarche, M. Juhel, J. F. Bresse and C. Daguet: J. Vac. Sci. Technol. A 15 (1997) 626.
6. R. J. Shul, G. B. McClellan, R. D. Briggs, D. J. Riger, S. J. Pearton, C. R. Abernathy, J. W. Lee, C. Constantine and C. Barratt: J. Vac. Sci. Technol. A 15 (1997) 633.
7. Y. Fujiwara, K. Kikuchi, M. Hashimoto, H. Hatate, T. Imai, Y. Takeda, H. Nakano, M. Honda, T. Tatsuta and O. Tsuji: Jpn. J. Appl. Phys. 36 (1997) 7763.