Ion-assisted Si/XeF2 etching: Temperature dependence in the range 100-1000 K

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 5, 1996, Pages 2820-2826

  Vugts, M J M ^a   Hermans, L J F ^a   Beijerinck, H C W ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0030508351     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580205     Document Type: Article

References (24)

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