Low-temperature dry etching of InP by inductively coupled plasma using HI/Cl2

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 12 A, 2003, Pages

  Matsutani, Akihiro ^a   Ohtsuki, Hideo ^b   Koyama, Fumio ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b 33 Tanakamiya cho Takeda F   (Japan)

Author keywords

Cl2; Dry etching; HI; Inductively coupled plasma (ICP); InP

Indexed keywords

CHLORINE; DRY ETCHING; ETCHING; INDUCTIVELY COUPLED PLASMA; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; TEMPERATURE;

BAKING TEMPERATURE; BIAS POWER; LOW TEMPERATURE DRY ETCHING;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0742303598     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l1414     Document Type: Letter

References (5)

1. T. Yoshikawa, S. Kohmoto, M. Anan, N. Hamao, M. Baba, N. Takado, Y. Sugimoto, M. Sugimoto and K. Asakawa: Jpn. J. Appl. Phys. 31 (1992) 4381.
2. C. Youtsey, R. Grundbacher, R. Panepucci, I. Adesida and C. Caneau: J. Vac. Sci. & Technol. B 12 (1994) 3317.
3. G. A. Vawter and C. H. Ashby: J. Vac. Sci. & Technol. B 12 (1994) 3374.
4. A. Matsutani, F. Koyama and K. Iga: Jpn. J. Appl. Phys. 38 (1999) 4260.
5. T. Miyazaki, T. Kawasaki and H. Yano: Ext. Abstr. (50th Spring Meet. 2003); The Japan Society of Applied Physics and Related Societies, 28p-P9-5, p. 1485.