Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: Study of Ge auto-doping and p-type Zn doping

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages

  Dalapati, Goutam Kumar ^a   Wong, Terence Kin Shun ^b   Li, Yang ^b   Chia, Ching Kean ^a   Das, Anindita ^c   Mahata, Chandreswar ^d   Gao, Han ^a   Chattopadhyay, Sanatan ^c   Kumar, Manippady Krishna ^a   Seng, Hwee Leng ^a   Maiti, Chinmay Kumar ^d   Chi, Dong Zhi ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c UNIVERSITY OF CALCUTTA   (India)

^d INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

ALD; Epitaxial GaAs; Ge out diffusion and auto doping; High k dielectrics

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC LAYER DEPOSITION; ATOMS; CAPACITANCE; COMPUTER SOFTWARE; DIELECTRIC DEVICES; DIFFUSION; GALLIUM ARSENIDE; GERMANIUM COMPOUNDS; HIGH-K DIELECTRIC; III-V SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALS; MOS CAPACITORS; ORGANIC CHEMICALS; ORGANOMETALLICS; OXIDE SEMICONDUCTORS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SUBSTRATES; TITANIUM DIOXIDE; ZINC;

ATOMIC LAYER DEPOSITED; CAPACITANCE VOLTAGE CHARACTERISTIC; DOPING CONCENTRATION; EPITAXIAL GAAS; FREQUENCY DISPERSION; GE CONCENTRATIONS; METAL OXIDE SEMICONDUCTOR; OUT DIFFUSION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 84863292359     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-99     Document Type: Article

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