Selective epitaxial growth of GaAs on Ge by MOCVD

Journal of Crystal Growth

Volumn 297, Issue 1, 2006, Pages 204-210

  Brammertz, Guy ^a   Mols, Yves ^a   Degroote, Stefan ^a   Leys, Maarten ^a   Van Steenbergen, Jan ^a   Borghs, Gustaaf ^a   Caymax, Matty ^a  

^a IMEC   (Belgium)

Author keywords

A3. Metalorganic chemical vapor deposition; A3. Selective epitaxy; B2. Semiconducting gallium compounds; B2. Semiconducting germanium

Indexed keywords

EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; SEMICONDUCTING GERMANIUM; THIN FILMS;

ANTI-PHASE DOMAINS (APD); SELECTIVE EPITAXY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 37849185779     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.09.015     Document Type: Article

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