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Volumn 6, Issue , 2011, Pages 1-6

Characterization upon electrical hysteresis and thermal diffusion of tial 3o x dielectric film

Author keywords

Electrical hysteresis; Pulsed laser deposition; Thermal diffusion

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; DIFFUSION ACTIVATION ENERGY; DIFFUSION BEHAVIOR; DIFFUSION MODEL; ELECTRICAL GATES; ELECTRICAL HYSTERESIS; INTERFACIAL REGION; METAL ATOMS; OXIDE SYSTEMS; POST ANNEALING TREATMENT; PSEUDO-BINARIES; SIMPLE METHOD;

EID: 84862909286     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-557     Document Type: Article
Times cited : (8)

References (10)
  • 1
    • 0032680398 scopus 로고    scopus 로고
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    • Buchanan DA: Scaling the gate dielectric: materials, integration, and reliability. IBM J Res Dev 1999, 43:245.
    • (1999) IBM J Res Dev , vol.43 , pp. 245
    • Buchanan, D.A.1
  • 2
    • 0035872897 scopus 로고    scopus 로고
    • High-k gate dielectrics: Current status and material properties consideration
    • Wilk GD, Wallace RM, Anthony JM: High-k gate dielectrics: current status and material properties consideration. J Appl Phys 2001, 89:5243.
    • (2001) J Appl Phys , vol.89 , pp. 5243
    • Wilk, G.D.1    Wallace, R.M.2    Anthony, J.M.3
  • 4
    • 33748614600 scopus 로고    scopus 로고
    • Advanced high-k dielectric stacks with polysi and metal gates: Recent progress and current challenges
    • Gusev EP, Narayanan V, Frank MM: Advanced high-k dielectric stacks with polysi and metal gates: Recent progress and current challenges. IBM J Res Dev 2006, 50:387.
    • (2006) IBM J Res Dev , vol.50 , pp. 387
    • Gusev, E.P.1    Narayanan, V.2    Frank, M.M.3
  • 7
    • 33847155442 scopus 로고    scopus 로고
    • Thermal stability and electrical properties of titanium-aluminum oxide ultrathin films as high-k gate dielectric materials
    • Shi L, Xia YD, Xu B, Liu ZG: Thermal stability and electrical properties of titanium-aluminum oxide ultrathin films as high-k gate dielectric materials. J Appl Phys 2007, 101:034102.
    • (2007) J Appl Phys , vol.101 , pp. 034102
    • Shi, L.1    Xia, Y.D.2    Xu, B.3    Liu, Z.G.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.