Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages

  Wang, Cong ^a   Kim, Nam Young ^a  

^a Kwangwoon University   (South Korea)

Author keywords

Contact resistance; Edge line definition; High electron mobility transistor; Ohmic contact; Surface morphology

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; BARRIER LAYERS; DOMINANT FACTOR; EDGE LINES; EDGE PROFILE; EFFECTIVE DIFFUSION; ELECTRICAL CHARACTERIZATION; ENCAPSULATION LAYER; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); HIGH-QUALITY OHMIC CONTACTS; METAL LAYER; NANOSCALE SURFACE MORPHOLOGY; OHMIC CONTACT FORMATION; OHMIC METALLIZATION; OPTIMAL DEVICES; ROOT MEAN SQUARE DEVIATIONS;

CONTACT RESISTANCE; ELECTRIC CONTACTORS; FILM THICKNESS; GALLIUM NITRIDE; NANOTECHNOLOGY; OHMIC CONTACTS; OPTIMIZATION; SILICON NITRIDE; SURFACE MORPHOLOGY; TANTALUM;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84863292309     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-107     Document Type: Article

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