Formation of Ohmic contacts in AlGaN/GaN HEMT structures at 500 °C by Ohmic contact recess etching

Microelectronics Reliability

Volumn 49, Issue 5, 2009, Pages 558-561

  Lau, W S ^a   Tan, J B H ^a   Singh, B P ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN LAYERS; ALGAN/GAN HEMT; EDGE PROFILES; LOW TEMPERATURES; OHMIC RECESS; RECESS ETCHINGS;

ELECTRIC CONTACTORS; ELECTRON GAS; GALLIUM NITRIDE; TWO DIMENSIONAL ELECTRON GAS; WATER VAPOR;

OHMIC CONTACTS;

EID: 67349254511     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.02.010     Document Type: Article

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