Si-induced enhancement of ohmic performance of Ti/Al/Mo/Au metallisation for AlGaN/GaN HEMTs

Electronics Letters

Volumn 41, Issue 17, 2005, Pages 984-985

  Mohammed, F M ^a   Wang, L ^a   Koo, H J ^a   Adesida, I ^a  

^a United States of America   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; SILICON;

CONTACT RESISTANCE; INTER-METALLICS FORMATION; OHMIC PERFORMANCE;

TITANIUM COMPOUNDS;

EID: 24344505478     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20051849     Document Type: Article

References (11)

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