AlGaN/GaN HEMTs on a (001)-oriented silicon substrate based on 100-nm SiN recessed gate technology for microwave power amplification

IEEE Transactions on Electron Devices

Volumn 54, Issue 11, 2007, Pages 2843-2848

  Boulay, Sanae ^a,b   Touati, Salim ^a,c   Sar, Abdourahmane A ^a,d   Hoel, Virginie ^a   Gaquière, Christophe ^a   De Jaeger, Jean Claude ^a   Joblot, Sylvain ^e,f,g   Cordier, Yvon ^h   Semond, Fabrice ^h   Massies, Jean ^h  

^a INSTITUT D ELECTRONIQUE   (France)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

^c Delfmems   (France)

^d UNIVERSITY OF GRONINGEN   (Netherlands)

^e UNIVERSITÉ CÔTE D'AZUR   (France)

^f CRHEA CNRS   (France)

^g STMICROELECTRONICS   (France)

^h CNRS   (France)

Author keywords

AlGaN GaN; High electron mobility transistors (HEMTs); Microwave devices; Si (001)

Indexed keywords

CURRENT DENSITY; CUTOFF FREQUENCY; GATES (TRANSISTOR); MICROWAVE DEVICES; SCATTERING PARAMETERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; SUBSTRATES; TRANSCONDUCTANCE;

MICROWAVE POWER AMPLIFICATION; S-PARAMETER MEASUREMENTS; SILICON SUBSTRATE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 36249004903     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.907189     Document Type: Article

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