Polycrystalline Si nanowire SONOS nonvolatile memory cell fabricated on a gate-all-around (GAA) channel architecture

IEEE Electron Device Letters

Volumn 30, Issue 3, 2009, Pages 246-249

  Fu, J ^a   Jiang, Y ^a   Singh, Navab ^a   Zhu, C X ^b   Lo, G Q ^a   Kwong, D L ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Gate all around (GAA); Nanowire; Nonvolatile memory; Polycrystalline silicon (poly Si); SONOS

Indexed keywords

APPLICATION SPECIFIC INTEGRATED CIRCUITS; FABRICATION; GALLIUM ALLOYS; INTEGRATED CIRCUITS; MICROPROCESSOR CHIPS; NANOWIRES; SEMICONDUCTOR STORAGE;

GATE-ALL-AROUND (GAA); NANOWIRE; NONVOLATILE MEMORY; POLYCRYSTALLINE SILICON (POLY-SI); SONOS;

POLYSILICON;

EID: 62549097281     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2011503     Document Type: Article

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