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Volumn 12, Issue 3, 2012, Pages 1292-1298

Dislocation-eliminating chemical control method for high-efficiency GaN-based light emitting nanostructures

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL CONTROLS; CHEMICAL WET ETCHING; CORE/SHELL; CRYSTAL QUALITIES; DISLOCATION-FREE; ETCHING MECHANISM; ETCHING METHOD; ETCHING TECHNIQUE; GAN LAYERS; GAN NANOSTRUCTURES; HIGH QUALITY; INGAN QUANTUM WELLS; INGAN/GAN; OPTICAL PERFORMANCE; RESIDUAL STRAINS; SELECTIVE ETCHING; STRAIN-RELAXED; VAPOR PHASE;

EID: 84863275384     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg2013107     Document Type: Article
Times cited : (19)

References (32)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.