GaN based nanorod light emitting diodes by selective area epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 2236-2239

  Zang, Keyan ^a   Chua, Soo Jin ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

GaN; LEDs; MOCVD; Nanorods; Photoluminescence; Structure

Indexed keywords

ANODIZED ALUMINUM OXIDE; CATALYST-FREE; CRYSTAL QUALITIES; GALLIUM NITRIDE FILMS; GAN; GAN NANORODS; HIGH ASPECT RATIO; LED ARRAYS; LEDS; LIGHT EXTRACTION; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; NANO-POROUS SILICON; SAPPHIRE SUBSTRATES; SECTIONAL VIEWS; SELECTIVE AREA EPITAXY; STRUCTURE; VERTICALLY ALIGNED;

ALUMINUM GALLIUM NITRIDE; ASPECT RATIO; EPITAXIAL GROWTH; FILM GROWTH; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANORODS; PHOTOLUMINESCENCE; PHYSICAL OPTICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SILICA; SILICON OXIDES; WATER ANALYSIS;

GALLIUM ALLOYS;

EID: 77955838674     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983502     Document Type: Conference Paper

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