Field emission from well-aligned zinc oxide nanowires grown at low temperature

Applied Physics Letters

Volumn 81, Issue 19, 2002, Pages 3648-3650

  Lee, C J ^a   Lee, T J ^a   Lyu, S C ^a   Zhang, Y ^a   Ruh, H ^b   Lee, H J ^b  

^a Hanyang University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS FIELD; EMISSION CURRENT DENSITY; FIELD ELECTRON EMISSIONS; FIELD EMITTER; HIGH-PURITY; LOW TEMPERATURES; SINGLE-CRYSTALLINE WURTZITE; VAPOR DEPOSITION METHOD; WELL-ALIGNED; ZINC OXIDE NANOWIRES; ZNO; ZNO NANOWIRES;

FLAT PANEL DISPLAYS; NANOWIRES; ZINC; ZINC SULFIDE;

ZINC OXIDE;

EID: 79956010166     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1518810     Document Type: Article

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