Interface properties of OFETs based on an air-stable n-channel perylene tetracarboxylic diimide semiconductor

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 3, 2012, Pages 585-593

  Lüttich, Franziska ^a   Lehmann, Daniel ^a   Friedrich, Marion ^a   Chen, Zhihua ^b   Facchetti, Antonio ^b   Borczyskowski, Christian Von ^a   Zahn, Dietrich R T ^a   Graaf, Harald ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b POLYERA CORPORATION   (United States)

Author keywords

field effect transistors; Kelvin probe force microscopy; optical constants; organic semiconductors

Indexed keywords

AIR-STABLE; CARRIER TRAPS; DC ELECTRICAL; DIELECTRIC INTERFACE; DIELECTRIC SURFACE; DRAIN BIAS; ELECTRICAL MEASUREMENT; ERROR BARS; EXPERIMENTAL TECHNIQUES; GAIN INSIGHT; GATE INSULATOR; HYDROPHOBIZATIONS; INJECTION BARRIERS; INTERFACE PROPERTY; INTERMOLECULAR INTERACTIONS; KELVIN PROBE FORCE MICROSCOPY; MOLECULAR ARRANGEMENTS; MOLECULAR TILT; N-CHANNEL; ORGANIC SEMICONDUCTOR; PERYLENE DERIVATIVES; PERYLENE TETRACARBOXYLIC DIIMIDE; POTENTIOMETRY;

CONTACT RESISTANCE; ELECTRON MOBILITY; ELLIPSOMETRY; OPTICAL CONSTANTS; POTENTIOMETERS (ELECTRIC MEASURING INSTRUMENTS); SELF ASSEMBLED MONOLAYERS; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON COMPOUNDS; WATER INJECTION;

FIELD EFFECT TRANSISTORS;

EID: 84863247490     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201127592     Document Type: Article

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