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Applied Physics Letters
Volumn 95, Issue 14, 2009, Pages
Kelvin force gradient microscopy of pBTTT transistors in both the linear and saturation electrical regimes
Author keywords

[No Author keywords available]
Indexed keywords

ELECTRICAL CHARACTERISTIC; GATE POTENTIALS; KELVIN FORCE; LINEAR REGIME; POTENTIAL PROFILES; SATURATION MOBILITY; SATURATION REGIME; SIMPLE MODEL;
EID: 70349897172     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3242001     Document Type: Article
Times cited : (6)
References (15)
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  • 2
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    • Street, R.A.1    Salleo, A.2
  • 3
    • 33846308122 scopus 로고    scopus 로고
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    • DOI 10.1063/1.2402349
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    • Natali, D.1    Fumagalli, L.2    Sampietro, M.3
  • 4
    • 0037290286 scopus 로고    scopus 로고
    • Contact resistance extraction in pentacene thin film transistors
    • DOI 10.1016/S0038-1101(02)00204-6, PII S0038110102002046
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  • 7
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    • Gated four-probe measurements on pentacene thin-film transistors: Contact resistance as a function of gate voltage and temperature
    • DOI 10.1063/1.1806533, 13
    • P. V. Pesavento, R. J. Chesterfield, C. R. Newman, and C. D. Frisbie, J. Appl. Phys. 96, 7312 (2004). 10.1063/1.1806533 (Pubitemid 40044418)
    • (2004) Journal of Applied Physics , vol.96 , Issue.12 , pp. 7312-7324
    • Pesavento, P.V.1    Chesterfield, R.J.2    Newman, C.R.3    Frisble, C.D.4
  • 8
    • 31344433515 scopus 로고    scopus 로고
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    • DOI 10.1002/adma.200501394
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  • 13
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.