Selective area growth of InP on on-axis Si(001) substrates with low antiphase boundary formation

Journal of the Electrochemical Society

Volumn 159, Issue 3, 2012, Pages

  Loo, R ^a   Wang, G ^b   Orzali, T ^a   Waldron, N ^a   Merckling, C ^a   Leys, M R ^a   Richard, O ^a   Bender, H ^a   Eyben, P ^a   Vandervorst, W ^a,c   Caymax, M ^a  

^a IMEC   (Belgium)

^b MEMC Electronic Materials Inc   (United States)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

3-D GROWTH; ANTIPHASE BOUNDARIES; ANTIPHASE DOMAIN BOUNDARY; DEFECT FORMATION; DEVICE-QUALITY; GE SURFACES; HIGH ASPECT RATIO; HIGH DENSITY; INP; OFF-AXIS; SEED LAYER; SELECTIVE AREA GROWTH; SELECTIVE EPITAXIAL GROWTH; SHALLOW TRENCH ISOLATION; SI (001) SUBSTRATE; SI SUBSTRATES; SIDE WALLS; STEP-FLOW GROWTH; THREADING DISLOCATION; VIRTUAL SUBSTRATES;

ASPECT RATIO; EPITAXIAL GROWTH; GERMANIUM; SILICON WAFERS; SUBSTRATES;

SILICON;

EID: 84863149657     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.051203jes     Document Type: Article

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