Growth of III/V materials on large area silicon

ECS Transactions

Volumn 28, Issue 5, 2010, Pages 233-236

  Schineller, B ^a   Nguyen, N D ^b   Heuken, M ^a  

^a AIXTRON AG   (Germany)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL INDUSTRY; SEMICONDUCTING GERMANIUM; SILICON;

CHANNEL ENGINEERING; CMOS TECHNOLOGY; HIGH COMPLEXITY; MOCVD GROWTH; PROCESSING STRATEGIES; SEMICONDUCTOR ELECTRONICS; SHORT-CHANNEL EFFECT; SILICON INDUSTRY;

CMOS INTEGRATED CIRCUITS;

EID: 78650452494     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3367955     Document Type: Conference Paper

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2. B. Kunert, S. Zinnkann, K. Volz, W. Stolz, J. of Crystal Growth 310, 4776 (2008)
3. I. Nemeth, B. Kunert, W. Stolz, K. Volz, J. of Crystal Growth 310, 1595 (2008)
4. I. Németh, B. Kunert, W. Stolz, K. Volz, J. of Crystal Growth 310, 4763 (2008)
5. Process Integration, Devices and Structures, ITRS 2009 Edition, www.itrs.net
6. R.J.W. Hill, D.A.J. Moran, X. Li, H. Zhou, D. Macintyre, S. Thorns, R. Droopad, M. Passlack, I.G. Thayne, Electronics Letters 43, 543 (2007)