Demonstration of planar thick InP layers by selective MOVPE

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 4795-4798

  Dupuis, N ^a   Decobert J ^a   Lagree P Y ^b   Lagay, N ^a   Carpentier, D ^a   Alexandre, F ^a  

^a ALCATEL THALES III V LAB   (France)

^b CNRS   (France)

Author keywords

A3. Metal organic vapor phase epitaxy; A3. Selective epitaxy; B2. InP

Indexed keywords

CRYSTAL GROWTH; OPTICAL MICROSCOPY; VAPORS;

A3. METAL-ORGANIC VAPOR-PHASE EPITAXY; A3. SELECTIVE EPITAXY; B2. INP; ELECTRONIC MICROSCOPIES; GROWTH CONDITIONS; OPTICAL INTERFEROMETERS; ORGANIC VAPORS; REDUCED PRESSURES; SURFACE PROFILERS; THICK LAYERS; THICKNESS PROFILES; VAPOR PHASE DIFFUSIONS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 56249123936     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.095     Document Type: Article

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