In-situ HCl etching of InP in shallow-trench-isolated structures

ECS Transactions

Volumn 41, Issue 7, 2011, Pages 345-354

  Orzali, T ^a   Wang, G ^b   Waldron, N ^a   Merckling, C ^a   Richard, O ^a   Bender, H ^a   Wang, W E ^a   Caymax, M ^a  

^a IMEC   (Belgium)

^b MEMC Electronic Materials Inc ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; LATTICE MISMATCH; SEMICONDUCTING INDIUM PHOSPHIDE; SILICA; SILICON WAFERS; SUBSTRATES;

BUFFER MATERIALS; ETCHING PROCESS; HIGH MOBILITY CHANNELS; LARGE DIAMETER; PROCESS DEVELOPMENT; SELECTIVE EPITAXY; SHALLOW TRENCH ISOLATION; SHALLOW-TRENCH-ISOLATED;

CHLORINE COMPOUNDS;

EID: 84863146019     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3633315     Document Type: Conference Paper

References (15)

1. M. Radosavljevic, G. Dewey, J. M. Fastenau, J. Kavalieros, R. Kotlyar, B. Chu-Kung, W. K. Liu, D. Lubyshev, M. Metz, K. Millard, N. Mukherjee, L. Pan, R. Pillarisetty, W. Rachmady, U. Shah and Robert Chau, 2010 IEEE International Electron Devices Meeting (IEDM), p - 126
2. R. Pillarisetty, B. Chu-Kung, S. Corcoran, G. Dewey, J. Kavalieros, H. Kennel, R. Kotlyar, V. Le, D. Lionberger, M. Metz, N. Mukherjee, J. Nah, W. Rachmady, M. Radosavljevic, U. Shah, S. Taft, H. Then, N. Zelick, and R Chau, 2010 IEEE International Electron Devices Meeting (IEDM), p - 150
3. G. Wang, M. R. Leys, N. D. Nguyen, R. Loo, G. Brammertz, O. Richard, H. Bender, J. Dekoster, M. Meuris, M. M. Heyns, andM. Caymax, J. Electrochem. Soc., 157, H1023 (2010)
4. R. Loo, G. Wang, T. Orzali, N. Waldron, C. Merckling, M. R. Leys, O. Richard, H. Bender, P. Eyben, W. Vandervorst, and M. Caymax, ECS Trans. This volume
5. J. Z. Li, J Bai, J. M. Hydrick, J. G. Fiorenza, C. Major, M. Carroll, Z. Shellenbarger and A. Lochtefeld, ECS Trans., 18(1), 887 (2009)
6. G. Wang M. R. Leys, R. Loo, O. Richard, H. Bender, N. Waldron, G. Brammertz, J. Dekoster, W. Wang, M. Seefeldt, M. Caymax, and M. M. Heyns Appl. Phys. Lett., 97, 121913 (2010)
7. T. Tsuchiya, T. Kitatani, K. Ouchi, H. Sato, M. Aoki, J. Crystal Growth, 272, 125 (2004)
8. T. Kitatani, T. Tsuchiya, K. Shinoda, M. Aoki et al., J. Crystal Growth, 274, 372 (2005)
9. C. Caneau, R. Bhat, M. Koza, J.R. Hayes and R. Esagui, J. Crystal Growth, 107, 203 (1991)
10. D. Franke, N. Sabelfeld, W. Ebert, P. Harde, P. Wolfram, N. Grote, J. Crystal Growth, 248, 421 (2003)
11. P. Wolfram, W. Ebert, J. Kreissl, N. Grote, J. Crystal Growth, 221, 177 (2000)
12. D. Bertone, R. Campi, G. Morello, J. Crystal Growth, 195, 624 (1998)
13. C. Ebert, J. Levkoff, J. Roberts, J. Seiler, C. Wanamaker, T. Pinnington, J. Crystal Growth, 298, 94 (2007)
14. C. Ebert, A. Bond, H. Cao, J. Levkoff, J. Roberts, J. Crystal Growth, 307, 92 (2007)
15. R. Loo, M. Caymax, I. Peytier, S. Decoutere, N. Collaert, P. Verheyen, W. Vandervorst and K. De Meyera, Journal of The Electrochemical Society, 150, G638 (2003)