Passivation properties of atomic-layer-deposited hafnium and aluminum oxides on Si surfaces

IEEE Transactions on Electron Devices

Volumn 59, Issue 2, 2012, Pages 342-348

  Wang, Jun ^a   Sadegh Mottaghian, Seyyed ^a   Farrokh Baroughi, Mahdi ^a  

^a South Dakota State University   (United States)

Author keywords

Atomic layer deposited (ALD); fixed charge density; interface trap density; surface passivation

Indexed keywords

ALUMINUM OXIDES; ATOMIC LAYER; ATOMIC LAYER DEPOSITED; CAPACITANCE VOLTAGE MEASUREMENTS; FIELD EFFECT PASSIVATION; FIXED CHARGE DENSITY; FIXED CHARGES; INTERFACE RECOMBINATION VELOCITY; INTERFACE TRAP DENSITY; INTERFACE TRAPS; METAL OXIDE SEMICONDUCTOR; MICROWAVE PHOTOCONDUCTIVITY; PASSIVATION PROPERTIES; SI SURFACES; SILICON SURFACES; SURFACE PASSIVATION;

ALUMINUM; ALUMINUM COATINGS; ATOMIC LAYER DEPOSITION; ATOMS; HAFNIUM; HAFNIUM OXIDES; OXIDES; PASSIVATION; SEMICONDUCTOR DEVICE MODELS; SILICON; SURFACE PROPERTIES; VAPOR DEPOSITION;

SEMICONDUCTING SILICON;

EID: 84862817831     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2176943     Document Type: Article

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