Comparison between aluminum oxide surface passivation films deposited with thermal ALD, plasma ALD and PECVD

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 3118-3121

  Dingemans, G ^a   Engelhart, P ^b   Seguin, R ^b   Mandoc, M M ^a   Van De Sanden, M C M ^a   Kessels, W M M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b Q CELLS SE ^*  (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDE SURFACES; FIELD-EFFECT; NEGATIVE CHARGE; PROPERTIES OF AL; ROBUST SOLUTIONS; SILICON SURFACES; SUBSTRATE TEMPERATURE; SURFACE PASSIVATION; THERMAL ALD;

ALUMINUM; ALUMINUM COATINGS; ATOMIC LAYER DEPOSITION; OXIDE FILMS; PHOTOVOLTAIC EFFECTS; PLASMA DEPOSITION;

PASSIVATION;

EID: 78650105044     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5614508     Document Type: Conference Paper

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