Excellent rear side passivation on multi-crystalline silicon solar cells with 20 nm uncapped Al2O3 layer: Industrialization of ALD for solar cell applications

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 44-49

  Cesar, I ^a   Granneman, E ^b   Vermont, P ^b   Tois, E ^c   Manshanden, P ^a   Geerligs, L J ^a   Bende, E E ^a   Burgers, A R ^a   Mewe, A A ^a   Komatsu, Y ^a   Weeber, A W ^a  

^a TNO   (Netherlands)

^b Levitech BV   (Netherlands)

^c ASM Microchemistry Oy   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDES; BIFACIAL CELL; CO-FIRING; CRYSTALLINE SILICON SOLAR CELLS; FORMING GAS; HIGH THROUGHPUT; LOW GROWTH RATE; MULTI-CRYSTALLINE SILICON SOLAR CELLS; P-TYPE; PASSIVATION PROPERTIES; POST TREATMENT; REAR SIDE; SOLAR-CELL APPLICATIONS;

ALUMINUM; ATOMIC LAYER DEPOSITION; CRYSTALLINE MATERIALS; OPEN CIRCUIT VOLTAGE; PHOTOVOLTAIC EFFECTS; SILICON SOLAR CELLS; SOLAR CELLS; THICK FILMS;

PASSIVATION;

EID: 78650114153     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5614176     Document Type: Conference Paper

References (16)

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