Low-temperature organic (CYTOP) passivation for improvement of electric characteristics and reliability in IGZO TFTs

IEEE Electron Device Letters

Volumn 33, Issue 3, 2012, Pages 381-383

  Choi, Sung Hwan ^a   Jang, Jun Hyuk ^a   Kim, Jang Joo ^a   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

Author keywords

CYTOP; indium gallium zinc oxide (IGZO) thin film transistors (TFTs); passivation; reliability

Indexed keywords

ANNEALING TEMPERATURES; BIAS-TEMPERATURE STRESS; CYTOP; ELECTRIC CHARACTERISTICS; ELECTRICAL CHARACTERISTIC; GOOD STABILITY; LOW DAMAGES; LOW TEMPERATURES;

GALLIUM; INDIUM; PASSIVATION; RELIABILITY; ZINC;

THIN FILM TRANSISTORS;

EID: 84862810065     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2178112     Document Type: Article

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