SCOPUS 정보 검색 플랫폼

Electrochemical and Solid-State Letters

Volumn 12, Issue 8, 2009, Pages

High stability InGaZnO4 thin-film transistors using sputter-deposited PMMA gate insulators and PMMA passivation layers

(7) Kim, Dong Hun a Choi, Seung Hoon b Cho, Nam Gyu a Chang, Youngeun a Kim, Ho Gi a Hong, Jae Min b Kim, Il Doo b

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b Korea Institute of Science and Technology (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AIR ATMOSPHERE; DIELECTRIC CONSTANTS; FIELD-EFFECT MOBILITIES; GATE INSULATOR; HIGH FIELD; HIGH STABILITY; LOW-LEAKAGE CURRENT; ON/OFF CURRENT RATIO; PASSIVATION LAYER; PMMA THIN FILM;

ESTERS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS;

PASSIVATION;

EID: 67649229450 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3142470 Document Type: Article

Times cited : (21)

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