New approach for passivation of Ga2O3-In 2O3-ZnO thin film transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 583-586

  Kim, Sun Il ^a   Kim, Chang Jung ^a   Park, Jae Chul ^a   Song, Ihun ^a   Kang, Dong Hun ^a   Lim, Hyuck ^a   Kim, Sang Wook ^a   Lee, Eunha ^a   Lee, Jae Chul ^a   Park, Youngsoo ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; PASSIVATION;

NEW APPROACHES;

ELECTRON DEVICES;

EID: 50249129272     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419006     Document Type: Conference Paper

References (3)

1. 3-ZnO TFT for Active-Matrix Organic Light-Emitting Diod Display Applicaton", IEDM Tech. Dig., pp. 11.6.1-11.6.4, 2005.
2. K. Nomura. H. Ohta, A. Takagi. T. Kamiya, M. Hirano, and H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconducto", Nature, Vol 432, pp488, 2004.
3. D. H. Zhang and D. B. Brodie, "The effect on polycrystalline ZnO film surfaces due to an Ar plasma introduced by vacuum gause", Thin Solid Film, Vol 257, pp. 58-62, 1995.