Electrical characterization of SiOx and SiNx prepared by PECVD technique on In0.53Ga0.47As

IEEE Transactions on Dielectrics and Electrical Insulation

Volumn 8, Issue 6, 2001, Pages 1011-1015

  Lu, Chih Cheng ^a   Ho, Chong Long ^a   Wu, Meng Chyi ^a   Shi, Tian Tsrong ^b   Ho, Wen Jeng ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b CHUNGHWA TELECOM CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; HYDROGEN; INDIUM COMPOUNDS; LEAKAGE CURRENTS; NITRIDES; OXIDES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; TEMPERATURE;

FURNACE ANNEALING; INTER DIFFUSION; INTERFACE QUALITY; METAL INSULATOR STRUCTURE; OPTIMUM ANNEALING TEMPERATURE;

DIELECTRIC FILMS;

EID: 0035693512     PISSN: 10709878     EISSN: None     Source Type: Journal    
DOI: 10.1109/94.971459     Document Type: Article

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