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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 28, Issue 1, 2010, Pages 116-119

Improvement in bias stability of amorphous- InGaZn O4 thin film transistors with Si Ox passivation layers

(8) Lim, Wantae a Douglas, E A a Norton, D P a Pearton, S J a Ren, F a Heo, Young Woo b Son, S Y c Yuh, J H c

a University of Florida (United States)

b Kyungpook National University (South Korea)

c APPLIED MATERIALS INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS STABILITY; BOTTOM GATE; DEVICE PERFORMANCE; FIELD-EFFECT MOBILITIES; GATE VOLTAGES; GLASS SUBSTRATES; HIGH-VOLTAGE STRESS; PASSIVATION LAYER; SUBTHRESHOLD; VOLTAGE STRESS; VOLTAGE SWINGS;

DRAIN CURRENT; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES; THIN FILM TRANSISTORS; THIN FILMS;

PASSIVATION;

EID: 77949352372 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3276774 Document Type: Conference Paper

Times cited : (40)

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