Molecular dynamic simulation for Cu cluster deposition on Si substrate

Computational Materials Science

Volumn 56, Issue , 2012, Pages 85-94

  Hwang, Shun Fa ^a   Li, Yi Hung ^a   Hong, Zheng Han ^b  

^a NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b Metal Industries Research and Development Centre MIRDC   (Taiwan)

Author keywords

BDT stress; Cluster; Epitaxy; Molecular dynamics; Sputtering; Surface roughness

Indexed keywords

ATOM NUMBERS; ATOMIC INTERACTIONS; CLUSTER; CLUSTER DEPOSITION; CLUSTER SIZES; CRITICAL CONDITION; FILM GROWTH MODE; INCIDENT ENERGY; INTERFACE MIXING; MANY-BODY POTENTIALS; SI SUBSTRATES; SPUTTERING PROCESS; SUBSTRATE TEMPERATURE;

ATOMS; COMPUTER SIMULATION; EPITAXIAL GROWTH; FILM GROWTH; MIXING; MOLECULAR DYNAMICS; MORSE POTENTIAL; SILICON; SPUTTERING; SUBSTRATES; SURFACE ROUGHNESS;

INTERFACES (MATERIALS);

EID: 84862776563     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2012.01.010     Document Type: Article

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