Critical conditions of epitaxy, mixing and sputtering growth on Cu(1 0 0) surface using molecular dynamics

Computational Materials Science

Volumn 41, Issue 1, 2007, Pages 70-77

  Hong, Zheng Han ^a   Hwang, Shun Fa ^a   Fang, Te Hua ^b  

^a NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

Author keywords

Accumulation ratio; Film growth; Ion beam assisted deposition (IBAD); Many body potential; Molecular dynamics; Sputtering

Indexed keywords

DEPOSITION RATES; EPITAXIAL GROWTH; MOLECULAR DYNAMICS; SPUTTERING; SUBSTRATES;

ACCUMULATION RATIO; INCIDENT ENERGY; SUBSTRATE TEMPERATURE; TIGHT BINDING SECOND MOMENTUM APPROACH(TB-SMA);

FILM GROWTH;

EID: 35348873234     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2007.03.004     Document Type: Article

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