Interfacial reactions of ultrahigh-vacuum-deposited Cu thin films on Si, Ge and on epitaxial Si-Ge layers on Si and Ge

Materials Science in Semiconductor Processing

Volumn 7, Issue 3 SPEC. ISS., 2004, Pages 143-156

  Chen, L J ^a   Liu, C S ^a   Lai, J B ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Cu; Interfacial reactions; Resistivity; Si; Si Ge

Indexed keywords

ANNEALING; GERMANIUM; SILICON; SURFACE CHEMISTRY; THERMAL EFFECTS; THIN FILMS; ULTRAHIGH VACUUM;

EPITAXIAL LAYERS; FILM THICKNESS; SHEET RESISTANCE;

COPPER;

EID: 5044226884     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.06.003     Document Type: Article

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