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Volumn 14, Issue 8, 2011, Pages

Electronic structure and photovoltaic properties of n-Type amorphous In-Ga-Zn-O and p-Type single crystal Si heterojunctions

(5) Lee, Kyeongmi a Nomura, Kenji a Yanagi, Hiroshi b Kamiya, Toshio a Hosono, Hideo a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b UNIVERSITY OF YAMANASHI (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACK REFLECTORS; BUILT-IN POTENTIAL; HARD X-RAY PHOTOEMISSION SPECTROSCOPY; P-TYPE; PHOTOVOLTAIC PROPERTY; SINGLE-CRYSTAL SI; THEORETICAL LIMITS; VACUUM-ANNEALING;

CONVERSION EFFICIENCY; CRYSTAL STRUCTURE; ELECTRON AFFINITY; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; GALLIUM; HETEROJUNCTIONS; IONIZATION POTENTIAL; OPEN CIRCUIT VOLTAGE; PHOTOVOLTAIC EFFECTS; SILICON WAFERS; SINGLE CRYSTALS; ZINC;

AMORPHOUS SILICON;

EID: 79959239804 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3595741 Document Type: Article

Times cited : (11)

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