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Volumn 24, Issue 11, 2012, Pages 2141-2147

Self-limiting oxidation in small-diameter Si nanowires

Author keywords

molecular dynamics; self limiting oxidation; Si nanowires; simulation

Indexed keywords

COMPLETE OXIDATION; CORE SHELL; HIGHER TEMPERATURES; LOW TEMPERATURES; MOLECULAR DYNAMICS SIMULATIONS; OXIDATION KINETICS; OXIDATION MECHANISMS; OXIDATION PROCESS; OXIDE SHELL; PHOTOVOLTAIC APPLICATIONS; PRECISE CONTROL; SELF-LIMITING PROCESS; SI NANOWIRE; SILICA NANO WIRES; SILICA SHELL; SILICON NANOWIRES; SIMULATION; THERMAL OXIDATION; ULTRA-SMALL; ULTRA-THIN;

EID: 84862183556     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm300707x     Document Type: Article
Times cited : (58)

References (47)
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    • Konagai, M.1
  • 19
    • 0004028234 scopus 로고    scopus 로고
    • Modeling of the Self-Limiting Oxidation for Nanofabrication of Si
    • In; San Diego, CA, March 27-29, 2000; Nano Science and Technology Institute: Austin, TX
    • Chen, Y. Modeling of the Self-Limiting Oxidation for Nanofabrication of Si. In Technical Proceedings of the Third International Conference on Modeling and Simulation of Microsystem; San Diego, CA, March 27-29, 2000; Nano Science and Technology Institute: Austin, TX, 2000; pp 56-58.
    • (2000) Technical Proceedings of the Third International Conference on Modeling and Simulation of Microsystem , pp. 56-58
    • Chen, Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.