Modeling of the self-limiting oxidation for nanofabrication of Si

2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000

Volumn , Issue , 2000, Pages 56-58

  Chen, Yijian ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BOUNDARY CONDITIONS; COMPUTER SIMULATION; ELECTRON BEAM LITHOGRAPHY; GEOMETRY; OXIDATION; SILICON; VOLUME MEASUREMENT;

CHEMICAL-REACTION RATE; DRY OXIDATION; SELF-LIMITING OXIDATION; STARTING RADII;

NANOSTRUCTURED MATERIALS;

EID: 0004028234     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. H. L. Liu, D. K. Biegelsen, F. A. Ponce, N. M. Johnson, and R. F. W. Pease, "Self-limiting oxidation for fabricating sub-5 nm silicon nanowires," Appl. Phys. Lett. 64, 1383 (1994).
2. C. Single, F. Zhou, H. Heidemeyer, F. E. Prins, D. P. Kern and E. Plies, "Oxidation properties of silicon dots on silicon oxide investigated using energy filtering transmission electron microscopy," J. Vac. Sci. Technol. B 16(6), 1998, pp. 3938-3941.
3. D. B. Kao, J. P. Mcvitte, W. Nix, and K. C. Saraswat, "Two-dimensional thermal oxidation of silicon-II. modeling stress effects in wet oxides," IEEE Trans. Electron Devices, vol. ED-35, No.1, 1988, pp.25-36.
4. S. Wolf and R. N. Tauber, Silicon Processing, Vol.-1., Sunset Beach, Lattice Press, 1986.