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Journal of the American Chemical Society

Volumn 124, Issue 29, 2002, Pages 8730-8740

Passive and active oxidation of Si(100) by atomic oxygen: A theoretical study of possible reaction mechanisms

(4) Choi, Cheol Ho a Liu, Da Jiang b Evans, J W b,c Gordon, Mark S b,c

a Kyungpook National University (South Korea)

b IOWA STATE UNIVERSITY (United States)

c IOWA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

REACTANTS;

ACTIVATION ENERGY; CHEMICAL BONDS; DESORPTION; ETCHING; GROUND STATE; OXIDATION; OXYGEN; SURFACE STRUCTURE;

SILICON;

DIMER; OXYGEN; SILICON DIOXIDE;

ADSORPTION; ARTICLE; ATOM; CALCULATION; CHEMICAL REACTION; DESORPTION; MOLECULAR STABILITY; OXIDATION; QUANTUM MECHANICS; REACTION ANALYSIS;

EID: 0037166999 PISSN: 00027863 EISSN: None Source Type: Journal
DOI: 10.1021/ja012454h Document Type: Article

Times cited : (54)

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