First-principles study of the structural, electronic, and optical properties of oxide-sheathed silicon nanowires

ACS Nano

Volumn 5, Issue 3, 2011, Pages 1713-1723

  Bondi, Robert J ^a   Lee, Sangheon ^a   Hwang, Gyeong S ^a  

^a The University of Texas at Austin   (United States)

Author keywords

disorder; electronic structure; first principles; optical property; oxidation; silicon nanowire

Indexed keywords

A-DENSITY; AMORPHOUS OXIDES; DIELECTRIC FUNCTIONS; DISORDER; FIRST-PRINCIPLES; FIRST-PRINCIPLES STUDY; OPTICAL SPECTRA; OXIDATION MODEL; OXIDE LAYER GROWTH; SERAPHIN COEFFICIENTS; SILICON NANOWIRE; SILICON NANOWIRES; STRUCTURE DISPERSION; SURFACE OXIDATIONS; SURFACE PASSIVATION;

AMORPHOUS SILICON; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; FUNCTIONAL GROUPS; NANOWIRES; OPTICAL PROPERTIES; OXIDATION; PASSIVATION; SILICON COMPOUNDS; STRUCTURAL PROPERTIES;

SILICON OXIDES;

NANOMATERIAL; OXIDE; SILICON;

ARTICLE; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; ELECTRIC CONDUCTIVITY; MACROMOLECULE; REFRACTOMETRY; ULTRASTRUCTURE;

COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; MACROMOLECULAR SUBSTANCES; MODELS, CHEMICAL; MODELS, MOLECULAR; MOLECULAR CONFORMATION; NANOSTRUCTURES; OXIDES; REFRACTOMETRY; SILICON;

EID: 79952957049     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn102232u     Document Type: Article

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