Electrical characteristics of gadolinium gallium oxidegallium oxide insulators on GaAs and In0.53Ga0.47As in metal-oxide-semiconductor field effect transistors - Admittance and subthreshold characteristics

Journal of Applied Physics

Volumn 110, Issue 5, 2011, Pages

  Paterson, G W ^a   Bentley, S J ^a   Holland, M C ^a   Thayne, I G ^a   Long, A R ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND PARAMETERS; DEFECT STATE; DEVICE PERFORMANCE; DIELECTRIC STACK; ELECTRICAL CHARACTERISTIC; GAAS; INTERFACE DEVICES; INTERFACE STATE; INTERFACE STATE DENSITY; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOSFETS; SIMPLE METHOD; SOURCE-DRAIN VOLTAGE; SUBTHRESHOLD CHARACTERISTICS; SUBTHRESHOLD SWING; SWEEP RATES;

DEFECTS; GADOLINIUM; GALLIUM ARSENIDE; INTERFACES (MATERIALS); MOSFET DEVICES; SEMICONDUCTING GALLIUM; SUBSTRATES;

GALLIUM ALLOYS;

EID: 80052959057     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3631076     Document Type: Conference Paper

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