C-plane bowing in free standing GaN crystals grown by HVPE on GaN-sapphire substrates with photolithographically patterned Ti masks

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2117-2119

  Łucznik, Bolesław ^a,b   Sochacki, Tomasz ^a   Sarzyński, Marcin ^a,b   Kryśko, Marcin ^a   Dziecielewski, Igor ^a   Grzegory, Izabella ^a,b   Porowski, Sylwester ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b TOPGAN LTD   (Poland)

Author keywords

Crystal bowing; GaN; HVPE

Indexed keywords

BULK GROWTH; ELECTRON CONCENTRATION; GAN; GAN CRYSTALS; GAN-SAPPHIRE; GROWTH PROCESS; HVPE; NUCLEATION MECHANISM; THEORETICAL ESTIMATION;

COALESCENCE; LATTICE MISMATCH;

GALLIUM NITRIDE;

EID: 79960714851     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201001000     Document Type: Article

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