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Journal of Crystal Growth

Volumn 312, Issue 18, 2010, Pages 2611-2615

Revealing extended defects in HVPE-grown GaN

(5) Weyher, J L a Ucznik, B a Grzegory, I a Smalc Koziorowska, J a Paskova, T b

a INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

b KYMA TECHNOLOGIES INC (United States)

Author keywords

A1. Defects; A1. Etching; A3. Hydride vapor phase epitaxy; B1. Nitrides

Indexed keywords

A1. DEFECTS; A3. HYDRIDE VAPOR PHASE EPITAXY; B1. NITRIDES; COMPLEX STRUCTURE; CRYSTALLOGRAPHIC DEFECTS; EXTENDED DEFECT; GAN CRYSTALS; GAN LAYERS; HYDRIDE VAPOR PHASE EPITAXY; MORPHOLOGICAL CHARACTERISTIC; NON-POLAR; NON-UNIFORM DISTRIBUTION; PHOTO-ETCHING; POLAR SURFACES; SELECTIVE ETCHING; TEM;

CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); ETCHING; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; VAPOR PHASE EPITAXY; VAPORS;

SURFACE DEFECTS;

EID: 77955418012 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.04.021 Document Type: Conference Paper

Times cited : (28)

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