The K2S2O8KOH photoetching system for GaN

Journal of Crystal Growth

Volumn 312, Issue 18, 2010, Pages 2607-2610

  Weyher, J L ^a   Tichelaar, F D ^b   Van Dorp, D H ^c   Kelly, J J ^c   Khachapuridze, A ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c UTRECHT UNIVERSITY   (Netherlands)

Author keywords

A1. Etching; A3. Characterization; B1. Nitrides

Indexed keywords

A1. ETCHING; A3. CHARACTERIZATION; B1. NITRIDES; CROSS-SECTIONAL TEM; DEFECT-SELECTIVE ETCHING; ELECTRICALLY ACTIVE DEFECTS; ELECTROLESS; ETCH RATES; ETCHING PARAMETERS; ETCHING SYSTEMS; KOH SOLUTION; OXIDIZING AGENTS; PHOTO-ETCHING; RAMAN MEASUREMENTS; RATE-LIMITING STEPS;

CARRIER CONCENTRATION; DEFECTS; GALLIUM ALLOYS; GALLIUM NITRIDE; POLISHING; POTASSIUM;

ETCHING;

EID: 77955431943     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.04.020     Document Type: Conference Paper

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