The influence of free-carrier concentration on the PEC etching of GaN: A calibration with Raman spectroscopy

Journal of Crystal Growth

Volumn 307, Issue 2, 2007, Pages 298-301

  Lewandowska, R ^a,c   Weyher, J L ^b,c   Kelly, J J ^d   Konczewicz, L ^a   Lucznik, B ^c  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^c INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^d UTRECHT UNIVERSITY   (Netherlands)

Author keywords

A1. Defects; A1. Etching; A3. Hydride vapor phase epitaxy; B1. Nitrides

Indexed keywords

CARRIER CONCENTRATION; ELECTROCHEMICAL ETCHING; RAMAN SPECTROSCOPY; SAMPLING; SURFACE DEFECTS; VAPOR PHASE EPITAXY;

ELECTROLESS PHOTO-ETCHING (PEC); FREE-CARRIER CONCENTRATIONS; HYDRIDE VAPOR PHASE EPITAXY (HVPE) TECHNIQUE;

GALLIUM NITRIDE;

EID: 34548478146     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.07.019     Document Type: Article

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