SCOPUS 정보 검색 플랫폼

Volumn 98, Issue 6, 2011, Pages

High-resolution core-level photoemission study of CF4-treated Gd2 O3 (Ga2 O3) gate dielectric on Ge probed by synchrotron radiation

(10) Pi, T W a Huang, M L b,c Lee, W C c Chu, L K c Lin, T D c Chiang, T H c Wang, Y C c Wu, Y D c Hong, M c Kwo, J b,c

a NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER (Taiwan)

b NATIONAL TAIWAN UNIVERSITY (Taiwan)

c NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; AS-GROWN; CORE-LEVEL PHOTOEMISSION; ELECTRICAL PERFORMANCE; GE SURFACES; HIGH RESOLUTION; INTERFACIAL ELECTRONIC STRUCTURE; OXIDE LAYER; PLASMA TREATMENT; UNIFORM INTERFACE;

ELECTRONIC STRUCTURE; GADOLINIUM; GALLIUM; GATE DIELECTRICS; GATES (TRANSISTOR); PHOTOEMISSION; PLASMA APPLICATIONS; SYNCHROTRON RADIATION; SYNCHROTRONS;

GERMANIUM;

EID: 79951804801 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3551726 Document Type: Article

Times cited : (11)

References (16)

1
- 48249136210
- 0003-6951, 10.1063/1.2959731
- H. Matsubara, T. Sasada, M. Takenaka, and S. Takagi, Appl. Phys. Lett. 0003-6951 93, 032104 (2008). 10.1063/1.2959731
- (2008) Appl. Phys. Lett. , vol.93 , pp. 032104
- Matsubara, H.¹ Sasada, T.² Takenaka, M.³ Takagi, S.⁴

2
- 33745728942
- Nanoscale germanium MOS dielectrics - Part I: Germanium oxynitrides
- DOI 10.1109/TED.2006.875808
- C. O. Chui, F. Ito, and K. C. Saraswat, IEEE Trans. Electron Devices 0018-9383 53, 1501 (2006). 10.1109/TED.2006.875808 (Pubitemid 43997209)
- (2006) IEEE Transactions on Electron Devices , vol.53 , Issue.7 , pp. 1501-1508
- Chui, C.O.¹ Ito, F.² Saraswat, K.C.³

3
- 59949093396
- 1071-1023, 10.1116/1.3043533
- S. F. Galata, G. Mavrou, P. Tsipas, A. Sotiropoulos, Y. Panayiotatos, and A. Dimoulas, J. Vac. Sci. Technol. B 1071-1023 27, 246 (2009). 10.1116/1.3043533
- (2009) J. Vac. Sci. Technol. B , vol.27 , pp. 246
- Galata, S.F.¹ Mavrou, G.² Tsipas, P.³ Sotiropoulos, A.⁴ Panayiotatos, Y.⁵ Dimoulas, A.⁶

4
- 78751542111
- 0163-1918
- M. Caymax, G. Eneman, F. Bellenger, C. Merckling, A. Delabie, G. Wang, R. Loo, E. Simoen, J. Mitard, B. De Jaeger, G. Hellings, K. De Meyer, M. Meuris, and M. Heyns, Tech. Dig.-Int. Electron Devices Meet. 0163-1918, 2009, 461.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2009 , pp. 461
- Caymax, M.¹ Eneman, G.² Bellenger, F.³ Merckling, C.⁴ Delabie, A.⁵ Wang, G.⁶ Loo, R.⁷ Simoen, E.⁸ Mitard, J.⁹ De Jaeger, B.¹⁰ Hellings, G.¹¹ De Meyer, K.¹² Meuris, M.¹³ Heyns, M.¹⁴

5
- 77954218873
- 0038-1101, 10.1016/j.sse.2010.04.034
- L. K. Chu, R. L. Chu, T. D. Lin, W. C. Lee, C. A. Lin, M. L. Huang, Y. J. Lee, J. Kwo, and M. Hong, Solid-State Electron. 0038-1101 54, 965 (2010). 10.1016/j.sse.2010.04.034
- (2010) Solid-State Electron. , vol.54 , pp. 965
- Chu, L.K.¹ Chu, R.L.² Lin, T.D.³ Lee, W.C.⁴ Lin, C.A.⁵ Huang, M.L.⁶ Lee, Y.J.⁷ Kwo, J.⁸ Hong, M.⁹

6
- 79751528824
- 1071-1023, 10.1116/1.3271143
- R. L. Chu, T. D. Lin, L. K. Chu, M. L. Huang, C. C. Chang, C. A. Lin, M. Hong, and J. Kwo, J. Vac. Sci. Technol. B 1071-1023 28, C3A1 (2010). 10.1116/1.3271143
- (2010) J. Vac. Sci. Technol. B , vol.28
- Chu, R.L.¹ Lin, T.D.² Chu, L.K.³ Huang, M.L.⁴ Chang, C.C.⁵ Lin, C.A.⁶ Hong, M.⁷ Kwo, J.⁸

7
- 42549119927
- High- k gate stack on germanium substrate with fluorine incorporation
- DOI 10.1063/1.2913048
- R. Xie, M. Yu, M. Y. Lai, L. Chan, and C. Zhu, Appl. Phys. Lett. 0003-6951 92, 163505 (2008). 10.1063/1.2913048 (Pubitemid 351590750)
- (2008) Applied Physics Letters , vol.92 , Issue.16 , pp. 163505
- Xie, R.¹ Yu, M.² Lai, M.Y.³ Chan, L.⁴ Zhu, C.⁵

8
- 79951785142
- Edited by NIST Electron Inelastic-Mean-Free-Path Database
- Edited by NIST Electron Inelastic-Mean-Free-Path Database, 11 (2000).
- (2000) , vol.11

9
- 85038903165
- 0556-2805, 10.1103/PhysRevB.63.153310
- T. W. Pi, J. F. Wen, C. P. Ouyang, and R. T. Wu, Phys. Rev. B 0556-2805 63, 153310 (2001). 10.1103/PhysRevB.63.153310
- (2001) Phys. Rev. B , vol.63 , pp. 153310
- Pi, T.W.¹ Wen, J.F.² Ouyang, C.P.³ Wu, R.T.⁴

10
- 44649084238
- Molecular beam epitaxy grown Ga2 O3 (Gd2 O3) high κ dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics
- DOI 10.1116/1.2884752
- C. H. Lee, T. D. Lin, L. T. Tung, M. L. Huang, M. Hong, and J. Kwo, J. Vac. Sci. Technol. B 1071-1023 26, 1128 (2008). 10.1116/1.2884752 (Pubitemid 351776832)
- (2008) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.26 , Issue.3 , pp. 1128-1131
- Lee, C.H.¹ Lin, T.D.² Tung, L.T.³ Huang, M.L.⁴ Hong, M.⁵ Kwo, J.⁶

11
- 33747862495
- In situ chemical and structural investigations of the oxidation of Ge(001) substrates by atomic oxygen
- DOI 10.1063/1.2337543
- A. Molle, M. N. K. Bhuiyan, G. Tallarida, and M. Fanciulli, Appl. Phys. Lett. 0003-6951 89, 083504 (2006). 10.1063/1.2337543 (Pubitemid 44286188)
- (2006) Applied Physics Letters , vol.89 , Issue.8 , pp. 083504
- Molle, A.¹ Bhuiyan, M.N.K.² Tallarida, G.³ Fanciulli, M.⁴

12
- 0000962586
- 0039-6028, 10.1016/0039-6028(86)90767-3
- D. Schmeisser, R. D. Schnell, A. Bogen, F. J. Himpsel, D. Roeger, G. Landgren, and J. F. Morar, Surf. Sci. 0039-6028 172, 455 (1986). 10.1016/0039-6028(86)90767-3
- (1986) Surf. Sci. , vol.172 , pp. 455
- Schmeisser, D.¹ Schnell, R.D.² Bogen, A.³ Himpsel, F.J.⁴ Roeger, D.⁵ Landgren, G.⁶ Morar, J.F.⁷

13
- 0008917498
- 0003-6951, 10.1063/1.126309
- K. Prabhakaran, F. Maeda, Y. Watanabe, and T. Ogino, Appl. Phys. Lett. 0003-6951 76, 2244 (2000). 10.1063/1.126309
- (2000) Appl. Phys. Lett. , vol.76 , pp. 2244
- Prabhakaran, K.¹ Maeda, F.² Watanabe, Y.³ Ogino, T.⁴

14
- 67651240703
- 0003-6951, 10.1063/1.3177195
- S. Swaminathan, Y. Oshima, M. A. Kelly, and P. C. McIntyre, Appl. Phys. Lett. 0003-6951 95, 032907 (2009). 10.1063/1.3177195
- (2009) Appl. Phys. Lett. , vol.95 , pp. 032907
- Swaminathan, S.¹ Oshima, Y.² Kelly, M.A.³ McIntyre, P.C.⁴

15
- 21544449965
- 0003-6951, 10.1063/1.106122
- O. Vancauwenberghe, O. C. Hellman, N. Herbots, and W. J. Tan, Appl. Phys. Lett. 0003-6951 59, 2031 (1991). 10.1063/1.106122
- (1991) Appl. Phys. Lett. , vol.59 , pp. 2031
- Vancauwenberghe, O.¹ Hellman, O.C.² Herbots, N.³ Tan, W.J.⁴

16
- 30744478197
- Surface termination and roughness of Ge(100) cleaned by HF and HCl solutions
- DOI 10.1063/1.2162699, 021903
- S. Sun, Y. Sun, Z. Liu, D. -I. Lee, S. Peterson, and P. Pianetta, Appl. Phys. Lett. 0003-6951 88, 021903 (2006). 10.1063/1.2162699 (Pubitemid 43100096)
- (2006) Applied Physics Letters , vol.88 , Issue.2 , pp. 1-3
- Sun, S.¹ Sun, Y.² Liu, Z.³ Lee, D.-I.⁴ Peterson, S.⁵ Pianetta, P.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.