Impact of post deposition annealing in the electrically active traps at the interface between Ge(001) substrates and LaGeOx films grown by molecular beam deposition

Journal of Applied Physics

Volumn 110, Issue 8, 2011, Pages

  Molle, Alessandro ^a   Baldovino, Silvia ^a,b   Fanciulli, Marco ^a,b   Tsoutsou, Dimitra ^c   Golias, Evangelos ^c   Dimoulas, Athanasios ^c  

^a LABORATORIO MDM   (Italy)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

^c INSTITUTE OF MATERIALS SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

AS-DEPOSITED FILMS; ELECTRICAL PERFORMANCE; ELECTRICAL RESPONSE; ELECTRICALLY DETECTED MAGNETIC RESONANCES; ELECTRON TRAPPING; GE SUBSTRATES; METAL-OXIDE- SEMICONDUCTORCAPACITORS; MOLECULAR BEAM DEPOSITION; POST DEPOSITION ANNEALING;

ANNEALING; ATOMIC SPECTROSCOPY; CHEMICAL MODIFICATION; GERMANIUM; MAGNETIC RESONANCE; METALLIC COMPOUNDS; MOLECULAR BEAMS; MOS CAPACITORS; PHOTOELECTRON SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

OXIDE FILMS;

EID: 80655128540     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3651400     Document Type: Article

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