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Applied Physics Letters

Volumn 98, Issue 16, 2011, Pages

Comparison of the interfacial and electrical properties of HfAlO films on Ge with S and GeO2 passivation

(7) Li, X F a Liu, X J a Zhang, W Q a Fu, Y Y a Li, A D a Li, H a Wu, D a

a NANJING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; ELECTRICAL PROPERTY; GE SUBSTRATES; HIGH QUALITY; INTERFACE QUALITY; INTERFACIAL LAYER; X-RAY PHOTOELECTRONS;

ATOMIC LAYER DEPOSITION; ELECTRIC PROPERTIES; GERMANIUM; HAFNIUM; SPECTROSCOPIC ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

PASSIVATION;

EID: 79955390920 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3581051 Document Type: Article

Times cited : (19)

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