On the enhancement of the drain current in indium-rich InGaAs surface-channel MOSFETs

IEEE Transactions on Electron Devices

Volumn 59, Issue 6, 2012, Pages 1653-1660

  Golam Sarwar, A T M ^a   Siddiqui, Mahmudur R ^b   Satter, Md Mahbub ^c   Haque, Anisul ^b  

^a UNITED INTERNATIONAL UNIVERSITY   (Bangladesh)

^b EAST WEST UNIVERSITY   (Bangladesh)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Charge neutrality level (CNL); drain current enhancement; InGaAs metal oxide semiconductor field effect transistors (MOSFETs); interface trap states (D it); subthreshold slope (SS)

Indexed keywords

BULK MOBILITY; CHARGE NEUTRALITY LEVEL; CURRENT ENHANCEMENT; ENHANCEMENT-MODE; GATE VOLTAGES; HIGH DENSITY; INTERFACE-TRAP STATES (D IT); LOW FREQUENCY; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFETS; SUBTHRESHOLD SLOPE;

DRAIN CURRENT; ELECTRON MOBILITY; INVERSION LAYERS; MOSFET DEVICES; SEMICONDUCTING INDIUM;

INTERFACE STATES;

EID: 84861347146     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2189863     Document Type: Article

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