Effect of interface states on sub-threshold response of III-V MOSFETs, MOS HEMTs and tunnel FETs

Solid-State Electronics

Volumn 54, Issue 12, 2010, Pages 1665-1668

  Kao, W C ^a   Ali, A ^a   Hwang, E ^a   Mookerjea, S ^a   Datta, S ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

HEMT; InGaAs; Interface states; MOSFET; Tunnel FET

Indexed keywords

HEMT; INGAAS; INTERFACE STATE; MOS-FET; TUNNEL FET;

HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; MOSFET DEVICES; SEMICONDUCTING INDIUM;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77957325052     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.07.018     Document Type: Article

References (6)

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3. Mookerjea S, Datta S. Comparative study of Si, Ge and InAs based steep subthreshold slope tunnel transistors for 0.25 V supply voltage logic applications. In: Device research conference; 2008. p. 47-8.
4. 0.3As quantum well field effect transistors on silicon substrate for low power logic applications. In: IEEE IEDM technical digest; 2009. p. 13.1.1-4.
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6. J. Robertson Interface states model for III-V oxide interfaces Microelectron Eng 86 2009 1558 1560