A self-consistent algorithm to extract interface trap states of MOS devices on alternative high-mobility substrates

Solid-State Electronics

Volumn 56, Issue 1, 2011, Pages 141-147

  Satter, Md Mahbub ^a   Islam, Ahmad Ehteshamul ^b   Varghese, Dhanoop ^b   Alam, Muhammad Ashraful ^b   Haque, Anisul ^c,d  

^a BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

^b PURDUE UNIVERSITY   (United States)

^c EAST WEST UNIVERSITY   (Bangladesh)

^d GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Alternative high mobility semiconductors; Extraction of interface trap state density; Low frequency C V method; Quantum mechanical effects; Wave function penetration

Indexed keywords

C-V MEASUREMENT; CONSISTENT ALGORITHM; ELEMENTAL SEMICONDUCTORS; EXTRACTION METHOD; FLAT-BAND VOLTAGE; GATE STACKS; HIGH MOBILITY; HIGH-MOBILITY SEMICONDUCTORS; II-IV SEMICONDUCTORS; INTERFACE TRAP STATE; INTERFACE TRAPS; ITERATIVE SCHEMES; LOW FREQUENCY; MOS STRUCTURE; QUANTUM MECHANICAL MODEL; QUANTUM-MECHANICAL EFFECTS; WAVE FUNCTION PENETRATION;

GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; WAVE FUNCTIONS;

MOS DEVICES;

EID: 78751648310     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.10.017     Document Type: Article

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