Demonstration of Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETs

Annual Device Research Conference Digest

Volumn , Issue , 1997, Pages 78-79

  Ren, F ^a   Hong, M ^a   Kuo, J M ^a   Hobson, W S ^a   Tsai, H S ^a   Lothian, J R ^a   Mannaerts, J P ^a   Kwo, J ^a   Chu, S N G ^a   Lin, J ^a   Chen, Y K ^a   Cho, A Y ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HYSTERESIS; MOLECULAR BEAM EPITAXY; OXIDES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

MOSFET DEVICES;

EID: 0030691631     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)