Effect of indium concentration on InGaAs channel metal-oxide-semiconductor field-effect transistors with atomic layer deposited gate dielectric

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 29, Issue 4, 2011, Pages

  Xue, Fei ^a   Zhao, Han ^a   Chen, Yen Ting ^a   Wang, Yanzhen ^a   Zhou, Fei ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ATOMIC LAYER DEPOSITION; DIELECTRIC DEVICES; DRAIN CURRENT; GATE DIELECTRICS; GATES (TRANSISTOR); INDIUM; ION BEAMS; SEMICONDUCTING INDIUM; TRANSCONDUCTANCE; TRANSISTORS; ZIRCONIUM ALLOYS;

ATOMIC LAYER DEPOSITED; CAPACITANCE VOLTAGE MEASUREMENTS; CONDUCTANCE METHOD; DEVICE PERFORMANCE; FREQUENCY DISPERSION; HIGH-K DIELECTRIC; INDIUM CONCENTRATION; INTERFACE TRAP DENSITY; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFETS; SUBTHRESHOLD SWING; SURFACE CHANNEL;

MOSFET DEVICES;

EID: 80051870744     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3597199     Document Type: Article

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